? 2004 ixys all rights reserved g = gate d = drain s = source tab = drain ds99210(9/04) polar tm hiperfet power mosfet advanced technical information n-channel enhancement mode fast recovery intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic diode advantages z easy to mount z space savings z high power density to-268 (ixft) g s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 175 c 1000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 17 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 10 c; r gs = 1 m ? 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 120 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c60a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 175 c, r g = 4 ? p d t c = 25 c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 5.5 g to-268 5.0 g g d s to-247ad (ixfh) v dss = 150 v i d25 = 120 a r ds(on) 17 m ? ? ? ? ? t rr 200 ns ixfh 120n15p ixft 120n15p d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 120n15p ixft 120n15p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 60 s c iss 4950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 330 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 33 ns t d(off) r g = 4 ? (external) 75 ns t f 30 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 34 nc q gd 77 nc r thjc 0.25 k/w r thck (to-247) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a -di/dt = 100 a/ s v r = 100v q rm 100 600 ns nc ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 200 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline i ar 6a
? 2004 ixys all rights reserved ixfh 120n15p ixft 120n15p fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 0123456789101112 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v 5v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 012 345 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 00.5 11.5 22.5 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 120a i d = 60a v gs = 10v fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 30 60 90 120 150 180 210 240 270 300 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 120n15p ixft 120n15p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90 105 120 135 150 q g - nanocoulombs v g s - volts v ds = 75v i d = 60a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 210 44.555.566.577.588.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 30 60 90 120 150 180 210 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 30 60 90 120 150 180 210 240 270 300 330 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixfh 120n15p ixft 120n15p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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